Silicon Carbide (SiC) MOSFET offer outstanding high-frequency, high-voltage, and high-temperature performance. In power electronic systems, substituting traditional silicon IGBT devices with SiC MOSFET can increase the switching frequency of power circuits, improve system efficiency and power density, and reduce overall system costs. They are primarily suitable for applications in photovoltaic inverters, energy storage, industrial power supplies, new energy vehicles, motor drives, charging stations, and other fields.

MACMIC’s Silicon Carbide (SiC) MOSFET discretes are characterized by low switching losses, high operating junction temperatures, and low conduction resistance. These features ensure that the products possess sufficient robustness, delivering reliable performance in demanding applications.